Dual N-Channel MOSFET, 42 A, 60 V, 8-Pin DFN onsemi NTMFD5C674NLT1G
- RS Stock No.:
- 178-4314
- Mfr. Part No.:
- NTMFD5C674NLT1G
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 reel of 1500 units)**
MYR4,752.00
1500 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
|---|---|---|
| 1500 - 1500 | MYR3.168 | MYR4,752.00 |
| 3000 - 4500 | MYR3.099 | MYR4,648.50 |
| 6000 + | MYR3.042 | MYR4,563.00 |
**price indicative
- RS Stock No.:
- 178-4314
- Mfr. Part No.:
- NTMFD5C674NLT1G
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 42 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 14.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 37 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 2 | |
| Width | 6.1mm | |
| Typical Gate Charge @ Vgs | 4.7 nC @ 4.5 V | |
| Length | 5.1mm | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.05mm | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 42 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 14.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 37 W | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 2 | ||
Width 6.1mm | ||
Typical Gate Charge @ Vgs 4.7 nC @ 4.5 V | ||
Length 5.1mm | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
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