onsemi Dual 2 Type N-Channel Power MOSFET, 29 A, 40 V Enhancement, 8-Pin DFN
- RS Stock No.:
- 178-4299
- Mfr. Part No.:
- NVMFD5C478NLT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 1500 units)*
MYR6,669.00
FREE delivery for orders over RM 500.00
Last RS stock
- Final 1,500 unit(s), ready to ship from another location
Units | Per Unit | Per Reel* |
|---|---|---|
| 1500 - 1500 | MYR4.446 | MYR6,669.00 |
| 3000 - 4500 | MYR4.348 | MYR6,522.00 |
| 6000 + | MYR4.268 | MYR6,402.00 |
*price indicative
- RS Stock No.:
- 178-4299
- Mfr. Part No.:
- NVMFD5C478NLT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 175°C | |
| Forward Voltage Vf | 0.84V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 23W | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Width | 6.1 mm | |
| Length | 5.1mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 175°C | ||
Forward Voltage Vf 0.84V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 23W | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Width 6.1 mm | ||
Length 5.1mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Low on resistance
High current capability
PPAP capable
NVMFD5C478NLWF - Wettable Flanks Product
Benefits
Minimal conduction losses
Robust load performance
Safeguard against voltage overstress failures
Suitable for automotive applications
Enhanced Optical Inspection
Applications
Solenoid driver
Low side / high side driver
End Products
Automotive engine controllers
Antilock braking systems
Related links
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