Vishay Siliconix TrenchFET Type N-Channel MOSFET, 14.4 A, 250 V Enhancement, 8-Pin SO-8 Si7190ADP-T1-RE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

MYR42.51

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 10 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
5 - 745MYR8.502MYR42.51
750 - 1495MYR8.074MYR40.37
1500 +MYR7.67MYR38.35

*price indicative

Packaging Options:
RS Stock No.:
178-3875
Mfr. Part No.:
Si7190ADP-T1-RE3
Manufacturer:
Vishay Siliconix
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay Siliconix

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

14.4A

Maximum Drain Source Voltage Vds

250V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

14.9nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

56.8W

Maximum Operating Temperature

150°C

Height

1.07mm

Length

5.99mm

Standards/Approvals

No

Width

5 mm

Automotive Standard

No

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® power MOSFET

Low thermal resistance PowerPAK® package

Related links