Vishay Siliconix TrenchFET Type N-Channel MOSFET, 14.4 A, 250 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

MYR16,455.00

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Units
Per Unit
Per Reel*
3000 - 3000MYR5.485MYR16,455.00
6000 - 9000MYR5.364MYR16,092.00
12000 +MYR5.266MYR15,798.00

*price indicative

RS Stock No.:
178-3665
Mfr. Part No.:
Si7190ADP-T1-RE3
Manufacturer:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

14.4A

Maximum Drain Source Voltage Vds

250V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

14.9nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

56.8W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

5 mm

Length

5.99mm

Height

1.07mm

Automotive Standard

No

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® power MOSFET

Low thermal resistance PowerPAK® package

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