Vishay IRFBE Type N-Channel Power MOSFET, 1.7 A, 900 V Enhancement, 3-Pin TO-220AB IRFBF20PBF

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 50 units)*

MYR296.45

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 09 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Tube*
50 - 50MYR5.929MYR296.45
100 - 150MYR5.799MYR289.95
200 +MYR5.692MYR284.60

*price indicative

RS Stock No.:
178-0843
Mfr. Part No.:
IRFBF20PBF
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

1.7A

Maximum Drain Source Voltage Vds

900V

Series

IRFBE

Package Type

TO-220AB

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

38nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

54W

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS 2002/95/EC

Height

9.01mm

Length

10.41mm

Width

4.7 mm

Automotive Standard

No

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links