N-Channel MOSFET, 1.8 A, 800 V, 3-Pin TO-220AB Vishay IRFBE20PBF
- RS Stock No.:
- 178-0842
- Mfr. Part No.:
- IRFBE20PBF
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)**
MYR228.50
800 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Tube** |
|---|---|---|
| 50 - 50 | MYR4.57 | MYR228.50 |
| 100 - 150 | MYR4.469 | MYR223.45 |
| 200 + | MYR4.387 | MYR219.35 |
**price indicative
- RS Stock No.:
- 178-0842
- Mfr. Part No.:
- IRFBE20PBF
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.8 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6.5 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 54 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.7mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 10.41mm | |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.01mm | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.8 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.5 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 54 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.7mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 10.41mm | ||
Typical Gate Charge @ Vgs 38 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 9.01mm | ||
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