N-Channel MOSFET, 3.6 A, 600 V, 3-Pin TO-220AB Vishay IRFBC30PBF
- RS Stock No.:
- 178-0840
- Mfr. Part No.:
- IRFBC30PBF
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)**
MYR294.00
1150 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Tube** |
|---|---|---|
| 50 - 50 | MYR5.88 | MYR294.00 |
| 100 - 150 | MYR5.751 | MYR287.55 |
| 200 + | MYR5.645 | MYR282.25 |
**price indicative
- RS Stock No.:
- 178-0840
- Mfr. Part No.:
- IRFBC30PBF
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.6 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.2 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 74 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 4.7mm | |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.6 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.2 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 74 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 4.7mm | ||
Typical Gate Charge @ Vgs 31 nC @ 10 V | ||
Transistor Material Si | ||
Length 10.41mm | ||
Height 9.01mm | ||
Minimum Operating Temperature -55 °C | ||
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