N-Channel MOSFET, 19 A, 500 V, 3-Pin TO-247AC Vishay SIHG20N50E-GE3

RS Stock No.:: 169-5791
Mfr. Part No.:: SIHG20N50E-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 19 A, 500 V, 3-Pin TO-247AC Vishay SIHG20N50E-GE3

This image is representative of the product range

Bulk discount available

Price Each (In a Tube of 25)

MYR11.761

273 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Tube**
25 - 25	MYR11.761	MYR294.025
50 - 75	MYR11.502	MYR287.55
100 +	MYR11.291	MYR282.275

**price indicative

RS Stock No.:: 169-5791
Mfr. Part No.:: SIHG20N50E-GE3
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	19 A
Maximum Drain Source Voltage	500 V
Package Type	TO-247AC
Series	E Series
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	180 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	179 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Length	15.87mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	46 nC @ 10 V
Width	5.31mm
Number of Elements per Chip	1
Height	20.82mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V

N-Channel MOSFET, 19 A, 500 V, 3-Pin TO-247AC Vishay SIHG20N50E-GE3

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

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