STMicroelectronics SuperMESH N-Channel SuperMESH Power MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 168-6689
- Mfr. Part No.:
- STB4NK60ZT4
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
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View bulk pricing optionsSubtotal (1 reel of 1000 units)*
MYR3,724.00
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- Shipping from 28 December 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | MYR3.724 | MYR3,724.00 |
| 2000 - 3000 | MYR3.642 | MYR3,642.00 |
| 4000 + | MYR3.575 | MYR3,575.00 |
*price indicative
- RS Stock No.:
- 168-6689
- Mfr. Part No.:
- STB4NK60ZT4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | SuperMESH Power MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SuperMESH | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 18.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 70W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Height | 4.6mm | |
| Standards/Approvals | JEDEC JESD97 | |
| Width | 9.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type SuperMESH Power MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SuperMESH | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 18.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 70W | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Height 4.6mm | ||
Standards/Approvals JEDEC JESD97 | ||
Width 9.35mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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