STMicroelectronics SuperMESH Type N-Channel Zener-Protected SuperMESH MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 485-7412
- Mfr. Part No.:
- STP10NK60Z
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR77.53
FREE delivery for orders over RM 500.00
In Stock
- 15 unit(s) ready to ship from another location
- Plus 10 unit(s) shipping from 27 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 10 | MYR15.506 | MYR77.53 |
| 15 - 70 | MYR15.196 | MYR75.98 |
| 75 + | MYR12.508 | MYR62.54 |
*price indicative
- RS Stock No.:
- 485-7412
- Mfr. Part No.:
- STP10NK60Z
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | Zener-Protected SuperMESH MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SuperMESH | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.75Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Standards/Approvals | JESD97, ECOPACK | |
| Height | 9.15mm | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type Zener-Protected SuperMESH MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SuperMESH | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.75Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Standards/Approvals JESD97, ECOPACK | ||
Height 9.15mm | ||
Width 4.6 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics SuperMESH Type N-Channel Zener-Protected SuperMESH MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics SuperMESH Type N-Channel SuperMESH Power MOSFET 600 V Enhancement, 3-Pin TO-263
- STMicroelectronics SuperMESH Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220
- STMicroelectronics SuperMESH Type N-Channel SuperMESH Power MOSFET 600 V Enhancement, 3-Pin TO-263 STB4NK60ZT4
- STMicroelectronics SuperMESH Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220 STP11NK50Z
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 STP6NK60Z
- STMicroelectronics SuperMESH Type N-Channel MOSFET 1000 V Enhancement, 3-Pin TO-252 STD2NK100Z