Texas Instruments NexFET P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP CSD25404Q3T
- RS Stock No.:
- 168-4942
- Mfr. Part No.:
- CSD25404Q3T
- Manufacturer:
- Texas Instruments

This image is representative of the product range
Subtotal (1 reel of 250 units)**
MYR899.25
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR500.00
Units | Per Unit | Per Reel** |
---|---|---|
250 - 250 | MYR3.597 | MYR899.25 |
500 - 750 | MYR3.518 | MYR879.50 |
1000 + | MYR3.453 | MYR863.25 |
**price indicative
- RS Stock No.:
- 168-4942
- Mfr. Part No.:
- CSD25404Q3T
- Manufacturer:
- Texas Instruments
Select all | Attribute | Value |
---|---|---|
Brand | Texas Instruments | |
Channel Type | P | |
Maximum Continuous Drain Current | 104 A | |
Maximum Drain Source Voltage | 20 V | |
Series | NexFET | |
Package Type | VSON-CLIP | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 150 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1.15V | |
Minimum Gate Threshold Voltage | 0.65V | |
Maximum Power Dissipation | 96 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -12 V, +12 V | |
Width | 3.4mm | |
Length | 3.4mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 10.8 nC @ 4.5 V | |
Maximum Operating Temperature | +150 °C | |
Forward Diode Voltage | 1V | |
Minimum Operating Temperature | -55 °C | |
Height | 1.1mm | |
Select all | ||
---|---|---|
Brand Texas Instruments | ||
Channel Type P | ||
Maximum Continuous Drain Current 104 A | ||
Maximum Drain Source Voltage 20 V | ||
Series NexFET | ||
Package Type VSON-CLIP | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 150 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.15V | ||
Minimum Gate Threshold Voltage 0.65V | ||
Maximum Power Dissipation 96 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Width 3.4mm | ||
Length 3.4mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 10.8 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
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