Texas Instruments NexFET N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP CSD19502Q5BT
- RS Stock No.:
- 168-4940
- Mfr. Part No.:
- CSD19502Q5BT
- Manufacturer:
- Texas Instruments
Subtotal (1 reel of 250 units)**
MYR2,213.75
Temporarily out of stock - back order for despatch 27/08/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR500.00
Units | Per Unit | Per Reel** |
---|---|---|
250 + | MYR8.855 | MYR2,213.75 |
**price indicative
- RS Stock No.:
- 168-4940
- Mfr. Part No.:
- CSD19502Q5BT
- Manufacturer:
- Texas Instruments
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Texas Instruments | |
Channel Type | N | |
Maximum Continuous Drain Current | 157 A | |
Maximum Drain Source Voltage | 80 V | |
Series | NexFET | |
Package Type | VSON-CLIP | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 4.8 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.3V | |
Minimum Gate Threshold Voltage | 2.2V | |
Maximum Power Dissipation | 195 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 6.1mm | |
Maximum Operating Temperature | +150 °C | |
Width | 5.1mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 130 nC @ 10 V | |
Height | 1.05mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1V | |
Select all | ||
---|---|---|
Brand Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 157 A | ||
Maximum Drain Source Voltage 80 V | ||
Series NexFET | ||
Package Type VSON-CLIP | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 4.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.3V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 195 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.1mm | ||
Maximum Operating Temperature +150 °C | ||
Width 5.1mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 130 nC @ 10 V | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
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