DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 9.3 A, 20 V Enhancement, 7-Pin UDFN
- RS Stock No.:
- 165-8742
- Mfr. Part No.:
- DMN2014LHAB-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
MYR3,072.00
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 21 May 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR1.024 | MYR3,072.00 |
| 6000 - 9000 | MYR1.002 | MYR3,006.00 |
| 12000 + | MYR0.983 | MYR2,949.00 |
*price indicative
- RS Stock No.:
- 165-8742
- Mfr. Part No.:
- DMN2014LHAB-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | UDFN | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 1.7W | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | AEC-Q101, UL 94V-0, RoHS, J-STD-020, MIL-STD-202 | |
| Height | 0.6mm | |
| Length | 3.05mm | |
| Width | 2.05 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type UDFN | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 1.7W | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals AEC-Q101, UL 94V-0, RoHS, J-STD-020, MIL-STD-202 | ||
Height 0.6mm | ||
Length 3.05mm | ||
Width 2.05 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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