Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-7

RS Stock No.:: 165-8742
Mfr. Part No.:: DMN2014LHAB-7
Manufacturer:: DiodesZetex

Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-7

This image is representative of the product range

2950 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Price Each (On a Reel of 3000)

MYR1.249

Units	Per Unit	Per Reel*
3000 - 3000	MYR1.249	MYR3,747.00
6000 - 9000	MYR1.221	MYR3,663.00
12000 +	MYR1.199	MYR3,597.00

*price indicative

RS Stock No.:: 165-8742
Mfr. Part No.:: DMN2014LHAB-7
Manufacturer:: DiodesZetex

DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.3 A
Maximum Drain Source Voltage	20 V
Package Type	U-DFN2030
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	28 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	1.7 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	3.05mm
Number of Elements per Chip	2
Width	2.05mm
Typical Gate Charge @ Vgs	16 nC @ 4.5 V
Minimum Operating Temperature	-55 °C
Height	0.6mm

Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-7

Dual N-Channel MOSFET, Diodes Inc.