Diodes Inc Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 DMN65D8LDW-7
- RS Stock No.:
- 165-8845
- Mfr. Part No.:
- DMN65D8LDW-7
- Manufacturer:
- DiodesZetex
Bulk discount available
Subtotal (1 reel of 3000 units)**
MYR855.00
81000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR500.00
Real time qty checker
Units | Per Unit | Per Reel** |
---|---|---|
3000 - 3000 | MYR0.285 | MYR855.00 |
6000 - 9000 | MYR0.279 | MYR837.00 |
12000 + | MYR0.274 | MYR822.00 |
**price indicative
- RS Stock No.:
- 165-8845
- Mfr. Part No.:
- DMN65D8LDW-7
- Manufacturer:
- DiodesZetex
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 200 mA | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOT-363 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 8 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 20V | |
Maximum Power Dissipation | 400 mW | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 2.2mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Width | 1.35mm | |
Number of Elements per Chip | 2 | |
Typical Gate Charge @ Vgs | 0.87 nC @ 10 V | |
Height | 1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 8 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 20V | ||
Maximum Power Dissipation 400 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 2.2mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 1.35mm | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 0.87 nC @ 10 V | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
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