Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3

RS Stock No.:: 165-7249
Mfr. Part No.:: SI4178DY-T1-GE3
Manufacturer:: Vishay

Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3

This image is representative of the product range

Subtotal (1 reel of 2500 units)*

MYR3,477.50

FREE delivery for orders over RM 150.00

Temporarily out of stock

Shipping from 11 January 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Reel*
2500 +	MYR1.391	MYR3,477.50

*price indicative

RS Stock No.:: 165-7249
Mfr. Part No.:: SI4178DY-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	30V
	Series	Si4178DY
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	33mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	7.5nC
	Forward Voltage Vf	0.85V
	Maximum Gate Source Voltage Vgs	25V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	5W
	Maximum Operating Temperature	150°C
	Length	5mm
	Standards/Approvals	RoHS
	Height	1.55mm
	Width	4mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 30V
	Series Si4178DY
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 33mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 7.5nC
	Forward Voltage Vf 0.85V
	Maximum Gate Source Voltage Vgs 25V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 5W
	Maximum Operating Temperature 150°C
	Length 5mm
	Standards/Approvals RoHS
	Height 1.55mm
	Width 4mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Si4178DY Series MOSFET, 30V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SI4178DY-T1-GE3

This MOSFET is a surface-mount N-channel enhancement device designed for power switching and management in compact electronic systems. It offers moderate voltage handling and high continuous current capability, suited to applications where efficient high-current switching and thermal endurance are required. The component complies with RoHS and is intended for board-level mounting in industry and commercial designs.

Features and Benefits:

• 30V drain rating enables medium-voltage switching applications
• 12A continuous current supports high-current load control
• 33mΩ Rds(on) reduces conduction losses in power paths
• 7.5nC typical gate charge allows fast gate transitions
• 5W power dissipation helps manage thermal load in small packages

Applications

• Suitable for DC-DC converter output stages
• Ideal for battery management and power distribution
• Used with motor drivers for compact actuators
• Can be used for load switching in telecom equipment

What gate voltage limitations must designers observe?

The device accepts up to 25V between gate and source, so gate drivers must remain within this limit to avoid gate-oxide stress.

How does thermal performance influence PCB layout decisions?

With a 5W dissipation rating, designers should provide adequate copper area and thermal vias beneath the SOIC footprint to improve heat-spreading and maintain junction temperature within limits.

What ambient temperature range can it operate within?

It functions reliably from -55°C to 150°C, which informs selection for applications exposed to wide thermal extremes.

What package and mounting considerations affect assembly?

The part is supplied in an SOIC-8 surface-mount package with an overall profile height of 1.55mm, so stencil design and solder-paste volume must be tuned for consistent solder joints.