N-Channel MOSFET, 23 A, 60 V, 3-Pin DPAK Vishay SUD23N06-31-GE3
- RS Stock No.:
- 165-2431
- Mfr. Part No.:
- SUD23N06-31-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 reel of 2000 units)**
MYR4,226.00
4000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
|---|---|---|
| 2000 - 2000 | MYR2.113 | MYR4,226.00 |
| 4000 - 6000 | MYR2.066 | MYR4,132.00 |
| 8000 + | MYR2.028 | MYR4,056.00 |
**price indicative
- RS Stock No.:
- 165-2431
- Mfr. Part No.:
- SUD23N06-31-GE3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 23 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 31 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.73mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.38mm | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 23 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 31 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.73mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 11 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Minimum Operating Temperature -55 °C | ||
Height 2.38mm | ||
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