Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G

RS Stock No.:: 163-1114
Mfr. Part No.:: NTJD1155LT1G
Manufacturer:: onsemi

Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G

This image is representative of the product range

Price Each (On a Reel of 3000)

MYR1.531

2500 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Reel**
3000 +	MYR1.531	MYR4,593.00

**price indicative

RS Stock No.:: 163-1114
Mfr. Part No.:: NTJD1155LT1G
Manufacturer:: onsemi

NTJD1155L Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	1.3 A
Maximum Drain Source Voltage	8 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	320 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Maximum Power Dissipation	400 mW
Transistor Configuration	N+P Loadswitch
Maximum Gate Source Voltage	+8 V
Width	1.35mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Length	2.2mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1mm

Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G

Dual N/P-Channel MOSFET, ON Semiconductor

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