N-Channel MOSFET, 80 A, 100 V, 3-Pin I2PAK Infineon IPI086N10N3GXKSA1

RS Stock No.:: 145-9306
Mfr. Part No.:: IPI086N10N3GXKSA1
Manufacturer:: Infineon

N-Channel MOSFET, 80 A, 100 V, 3-Pin I2PAK Infineon IPI086N10N3GXKSA1

This image is representative of the product range

Price Each (In a Tube of 50)

MYR6.802

1350 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Tube**
50 - 50	MYR6.802	MYR340.10
100 - 150	MYR6.652	MYR332.60
200 +	MYR6.53	MYR326.50

**price indicative

RS Stock No.:: 145-9306
Mfr. Part No.:: IPI086N10N3GXKSA1
Manufacturer:: Infineon

IPP086N10N3 G, IPI086N10N3 G, IPB083N10N3 G, IPD082N10N3 G, OptiMOS3 Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	100 V
Package Type	I2PAK (TO-262)
Series	OptiMOS™ 3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	15.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	42 nC @ 10 V
Length	10.36mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Width	4.572mm
Number of Elements per Chip	1
Height	11.177mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 80 A, 100 V, 3-Pin I2PAK Infineon IPI086N10N3GXKSA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over

Related links