N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 Infineon IPP072N10N3GXKSA1
- RS Stock No.:
- 754-5480
- Mfr. Part No.:
- IPP072N10N3GXKSA1
- Manufacturer:
- Infineon
Subtotal (1 pack of 2 units)**
MYR19.10
14 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Pack** |
---|---|---|
2 + | MYR9.55 | MYR19.10 |
**price indicative
- RS Stock No.:
- 754-5480
- Mfr. Part No.:
- IPP072N10N3GXKSA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 80 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220 | |
Series | OptiMOS™ 3 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 7.2 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 150 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.36mm | |
Maximum Operating Temperature | +175 °C | |
Width | 15.95mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 51 nC @ 10 V | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 4.57mm | |
Select all | ||
---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220 | ||
Series OptiMOS™ 3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.36mm | ||
Maximum Operating Temperature +175 °C | ||
Width 15.95mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 51 nC @ 10 V | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 4.57mm | ||
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