Vishay TrenchFET Type P-Channel MOSFET, 8 A, 20 V Enhancement, 6-Pin TSOP
- RS Stock No.:
- 134-9155
- Mfr. Part No.:
- SI3493DDV-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
MYR1,920.00
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 24 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR0.64 | MYR1,920.00 |
| 6000 - 9000 | MYR0.626 | MYR1,878.00 |
| 12000 + | MYR0.615 | MYR1,845.00 |
*price indicative
- RS Stock No.:
- 134-9155
- Mfr. Part No.:
- SI3493DDV-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 51mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34.8nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 3.6W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.1mm | |
| Height | 1mm | |
| Width | 1.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 51mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34.8nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 3.6W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.1mm | ||
Height 1mm | ||
Width 1.7 mm | ||
Automotive Standard No | ||
P-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 6-Pin TSOP SI3493DDV-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin TSOP
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 6-Pin TSOP
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 6-Pin TSOP
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin TSOP SI3477DV-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 6-Pin TSOP Si3129DV-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 6-Pin TSOP SI3421DV-T1-GE3
- Vishay Dual TrenchFET 2 Type N 3.9 A 6-Pin TSOP