Essential and Operational Technologies

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Units	Per Unit	Per Reel**
3000 - 3000	MYR0.96	MYR2,880.00
6000 - 9000	MYR0.938	MYR2,814.00
12000 +	MYR0.921	MYR2,763.00

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	P
	Maximum Continuous Drain Current	10.4 A
	Maximum Drain Source Voltage	30 V
	Package Type	SOT-363
	Series	TrenchFET
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	38 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.6V
	Maximum Power Dissipation	19 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-12 V, +12 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Width	2.15mm
	Typical Gate Charge @ Vgs	48 nC @ 10 V
	Length	2.15mm
	Transistor Material	Si
	Height	0.8mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Vishay
	Channel Type P
	Maximum Continuous Drain Current 10.4 A
	Maximum Drain Source Voltage 30 V
	Package Type SOT-363
	Series TrenchFET
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 38 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.6V
	Maximum Power Dissipation 19 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -12 V, +12 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Width 2.15mm
	Typical Gate Charge @ Vgs 48 nC @ 10 V
	Length 2.15mm
	Transistor Material Si
	Height 0.8mm
	Minimum Operating Temperature -55 °C

Vishay TrenchFET P-Channel MOSFET, 10.4 A, 30 V, 6-Pin SOT-363 SIA449DJ-T1-GE3

FREE delivery for orders over MYR500.00

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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