Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363 SIA449DJ-T1-GE3

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Subtotal (1 reel of 3000 units)*

MYR2,880.00

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Per Unit
Per Reel*
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3000 - 3000MYR0.96MYR2,880.00-
6000 - 9000MYR0.938MYR2,814.002%
12000 +MYR0.921MYR2,763.004%

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RS Stock No.:
165-7182
Mfr. Part No.:
SIA449DJ-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-363

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.038Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-12V, +12V

Maximum Power Dissipation Pd

19W

Typical Gate Charge Qg @ Vgs

23.1nC

Forward Voltage Vf

-0.8V

Maximum Operating Temperature

150°C

Height

800μm

Length

2.15mm

Standards/Approvals

RoHS

Width

2.15mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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