P-Channel MOSFET, 10.4 A, 30 V, 6-Pin SOT-363 Vishay SIA449DJ-T1-GE3

RS Stock No.:: 165-7182
Mfr. Part No.:: SIA449DJ-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 10.4 A, 30 V, 6-Pin SOT-363 Vishay SIA449DJ-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (On a Reel of 3000)

MYR0.96

3000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Reel**
3000 - 3000	MYR0.96	MYR2,880.00
6000 - 9000	MYR0.938	MYR2,814.00
12000 +	MYR0.921	MYR2,763.00

**price indicative

RS Stock No.:: 165-7182
Mfr. Part No.:: SIA449DJ-T1-GE3
Manufacturer:: Vishay

SiA449DJ, P-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	10.4 A
Maximum Drain Source Voltage	30 V
Series	TrenchFET
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	38 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.6V
Maximum Power Dissipation	19 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-12 V, +12 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	2.15mm
Typical Gate Charge @ Vgs	48 nC @ 10 V
Number of Elements per Chip	1
Width	2.15mm
Height	0.8mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 10.4 A, 30 V, 6-Pin SOT-363 Vishay SIA449DJ-T1-GE3

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor

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