Toshiba DTMOSIV Type N-Channel MOSFET, 9.7 A, 600 V Enhancement, 3-Pin TO-220 TK10A60W,S4VX(M
- RS Stock No.:
- 125-0532
- Distrelec Article No.:
- 304-24-218
- Mfr. Part No.:
- TK10A60W,S4VX(M
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR36.54
FREE delivery for orders over RM 500.00
In Stock
- Plus 90 unit(s) shipping from 02 February 2026
- Plus 920 unit(s) shipping from 09 February 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | MYR7.308 | MYR36.54 |
| 25 - 45 | MYR7.158 | MYR35.79 |
| 50 - 120 | MYR6.944 | MYR34.72 |
| 125 - 245 | MYR6.736 | MYR33.68 |
| 250 + | MYR6.534 | MYR32.67 |
*price indicative
- RS Stock No.:
- 125-0532
- Distrelec Article No.:
- 304-24-218
- Mfr. Part No.:
- TK10A60W,S4VX(M
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.7A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | DTMOSIV | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 30W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10mm | |
| Width | 4.5 mm | |
| Height | 15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.7A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series DTMOSIV | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 30W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Length 10mm | ||
Width 4.5 mm | ||
Height 15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
Related links
- Toshiba DTMOSIV Type N-Channel MOSFET 500 V EnhancementS5X(M
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS4VX(M
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS4VX(M
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VX(S
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1X(S
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1X(S
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS5X(M
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS5VX(J