DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 580 mA, 60 V Enhancement, 6-Pin SOT-26
- RS Stock No.:
- 122-3250
- Mfr. Part No.:
- DMN601DMK-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
MYR3,123.00
FREE delivery for orders over RM 500.00
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR1.041 | MYR3,123.00 |
| 6000 - 9000 | MYR1.018 | MYR3,054.00 |
| 12000 + | MYR0.999 | MYR2,997.00 |
*price indicative
- RS Stock No.:
- 122-3250
- Mfr. Part No.:
- DMN601DMK-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 580mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-26 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 304nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 980mW | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Length | 3.1mm | |
| Standards/Approvals | J-STD-020, MIL-STD-202, RoHS, AEC-Q101, UL 94V-0 | |
| Height | 1.3mm | |
| Width | 1.7 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 580mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-26 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 304nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 980mW | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Length 3.1mm | ||
Standards/Approvals J-STD-020, MIL-STD-202, RoHS, AEC-Q101, UL 94V-0 | ||
Height 1.3mm | ||
Width 1.7 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100 | ||
- COO (Country of Origin):
- CN
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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