DiodesZetex Isolated 2 Type N-Channel MOSFET, 8.6 A, 20 V Enhancement, 8-Pin TSSOP
- RS Stock No.:
- 122-2875
- Mfr. Part No.:
- DMN2016UTS-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
MYR3,155.00
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 22 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | MYR1.262 | MYR3,155.00 |
| 5000 - 7500 | MYR1.234 | MYR3,085.00 |
| 10000 + | MYR1.212 | MYR3,030.00 |
*price indicative
- RS Stock No.:
- 122-2875
- Mfr. Part No.:
- DMN2016UTS-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSSOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 16.5nC | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | 0.65V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 880mW | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101 | |
| Length | 4.5mm | |
| Width | 3.1 mm | |
| Height | 1.025mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSSOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 16.5nC | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf 0.65V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 880mW | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101 | ||
Length 4.5mm | ||
Width 3.1 mm | ||
Height 1.025mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Related links
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