N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220FP STMicroelectronics STF26NM60N
- RS Stock No.:
- 103-2000
- Mfr. Part No.:
- STF26NM60N
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 50 units)**
MYR847.40
2100 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Tube** |
---|---|---|
50 - 50 | MYR16.948 | MYR847.40 |
100 - 150 | MYR16.687 | MYR834.35 |
200 + | MYR16.362 | MYR818.10 |
**price indicative
- RS Stock No.:
- 103-2000
- Mfr. Part No.:
- STF26NM60N
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 20 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | TO-220FP | |
Series | MDmesh | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 165 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 35 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Length | 10.4mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 4.6mm | |
Height | 16.4mm | |
Select all | ||
---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220FP | ||
Series MDmesh | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 165 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 35 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.6mm | ||
Height 16.4mm | ||
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