Vishay SI2122DS Type N-Channel Single MOSFETs, 2.17 A, 100 V Enhancement, 3-Pin PowerPAK
- RS Stock No.:
- 653-087
- Mfr. Part No.:
- SI2122DS-T1-GE3
- Manufacturer:
- Vishay
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Subtotal (1 tape of 1 unit)*
MYR1.63
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Tape(s) | Per Tape |
|---|---|
| 1 - 24 | MYR1.63 |
| 25 - 99 | MYR1.43 |
| 100 - 499 | MYR1.30 |
| 500 - 999 | MYR1.11 |
| 1000 + | MYR1.04 |
*price indicative
- RS Stock No.:
- 653-087
- Mfr. Part No.:
- SI2122DS-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 2.17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SI2122DS | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.160Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 2.17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SI2122DS | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.160Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 1.6W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for compact, high-efficiency switching in low-power applications. It supports up to 100 V drain-source voltage. Packaged in a SOT-23 format, it utilizes TrenchFET Gen IV technology for low RDS(on), fast switching, and efficient thermal performance in space-constrained designs.
Pb Free
Halogen free
RoHS compliant
Used in LED backlighting
Related links
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