N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 Infineon IRLML2803TRPBF

RS Stock No.:: 302-022
Mfr. Part No.:: IRLML2803TRPBF
Manufacturer:: Infineon

N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 Infineon IRLML2803TRPBF

Bulk discount available

Subtotal (1 pack of 5 units)**

MYR4.99

1400 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR700.00

Units	Per Unit	Per Pack**
5 - 745	MYR0.998	MYR4.99
750 - 1495	MYR0.976	MYR4.88
1500 +	MYR0.948	MYR4.74

**price indicative

RS Stock No.:: 302-022
Mfr. Part No.:: IRLML2803TRPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 1.2A Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML2803TRPBF

This N-channel MOSFET delivers enhanced performance and reliability for a range of electronic applications. Designed with Hexfet technology, it operates efficiently in surface mount configurations, making it suitable for compact designs in the automation and electrical sectors. The combination of low RDS(on) and a high continuous drain current supports optimal power management in various conditions.

Features & Benefits

• Supports a maximum continuous drain current of 1.2A for effective performance
• High maximum drain-source voltage of 30V allows for versatile usage
• Low maximum drain-source resistance of 250mΩ minimises power losses
• Enhancement mode operation enables efficient switching capabilities
• Compact SOT-23 package is ideal for space-constrained applications
• Operates at high temperatures, with a maximum operating temperature of +150°C

Applications

• Utilised in DC-DC converters for effective energy management
• Employed in motor control circuits for improved precision
• Suitable for power supply switching in consumer electronics
• Integrated into automation systems for efficient load management

What is the optimal gate voltage for operation?

The optimal gate voltage for this device is +10V, allowing for efficient switching and performance.

How does it perform in high temperatures?

This component can function at temperatures up to +150°C, ensuring reliability in thermal conditions.

Can it handle pulsed drain currents?

Yes, it supports pulsed drain currents significantly above continuous ratings, accommodating short current surges.

What mounting type is recommended for this device?

Surface mount is the recommended type, as it provides better thermal performance and space efficiency in circuit designs.

What precautions should be taken during installation?

Proper thermal management and adherence to maximum ratings are necessary to prevent damage during operation.

For these production packs, non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	1.2 A
Maximum Drain Source Voltage	30 V
Package Type	SOT-23
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	250 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	540 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	3.3 nC @ 10 V
Width	1.4mm
Transistor Material	Si
Length	3.04mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C
Height	1.02mm