Infineon HEXFET Type N-Channel MOSFET, 1.2 A, 20 V Enhancement, 3-Pin SOT-23 IRLML2402TRPBF

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Subtotal (1 pack of 5 units)*

MYR4.55

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Units
Per Unit
Per Pack*
5 - 745MYR0.91MYR4.55
750 - 1495MYR0.89MYR4.45
1500 +MYR0.862MYR4.31

*price indicative

Packaging Options:
RS Stock No.:
302-016
Mfr. Part No.:
IRLML2402TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.2A

Maximum Drain Source Voltage Vds

20V

Series

HEXFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

540mW

Maximum Gate Source Voltage Vgs

12 V

Typical Gate Charge Qg @ Vgs

2.6nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.04mm

Height

1.02mm

Width

1.4 mm

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-36-994

N-Channel Power MOSFET 12V to 25V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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