ROHM R60 N-Channel MOSFET, 1 A, 600 V Enhancement, 3-Pin SOT-223-3 R6002JND4TL1
- RS Stock No.:
- 264-855
- Mfr. Part No.:
- R6002JND4TL1
- Manufacturer:
- ROHM
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MYR85.25
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Units | Per Unit | Per Tape* | Saving |
|---|---|---|---|
| 25 - 75 | MYR3.41 | MYR85.25 | - |
| 100 - 225 | MYR3.239 | MYR80.98 | 5% |
| 250 - 475 | MYR2.998 | MYR74.95 | 12% |
| 500 - 975 | MYR2.762 | MYR69.05 | 19% |
| 1000 + | MYR2.658 | MYR66.45 | 22% |
*price indicative
- RS Stock No.:
- 264-855
- Mfr. Part No.:
- R6002JND4TL1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223-3 | |
| Series | R60 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.25Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 7.0nC | |
| Maximum Power Dissipation Pd | 6.6W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223-3 | ||
Series R60 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.25Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 7.0nC | ||
Maximum Power Dissipation Pd 6.6W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM 600V 1A SOT-223-3 Presto MOS with integrated high-speed diode is a power MOSFET with fast reverse recovery time, suitable for the switching applications. Which increases design flexibility while maintaining the industry’s fastest reverse recovery time optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).
Fast reverse recovery time
Low on-resistance
Fast switching speed
Drive circuits can be simple
Pb-free plating and RoHS compliant
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