ROHM R60 N-Channel MOSFET, 1.3 A, 600 V Enhancement, 3-Pin SOT-223-3 R6003JND4TL1
- RS Stock No.:
- 264-849
- Mfr. Part No.:
- R6003JND4TL1
- Manufacturer:
- ROHM
This image is representative of the product range
Get a bulk buy discount
Add 100 more to save MYR19.60
View bulk pricing optionsSubtotal (1 tape of 10 units)*
MYR38.91
FREE delivery for orders over RM 150.00
In Stock
- Plus 60 unit(s) shipping from 09 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tape* | Saving |
|---|---|---|---|
| 10 - 90 | MYR3.891 | MYR38.91 | - |
| 100 - 240 | MYR3.695 | MYR36.95 | MYR19.60 |
| 250 - 490 | MYR3.421 | MYR34.21 | MYR117.50 |
| 500 - 990 | MYR3.147 | MYR31.47 | MYR372.00 |
| 1000 + | MYR3.039 | MYR30.39 | MYR852.00 |
*price indicative
- RS Stock No.:
- 264-849
- Mfr. Part No.:
- R6003JND4TL1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 1.3A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | R60 | |
| Package Type | SOT-223-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.15Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Power Dissipation Pd | 7.8W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 1.3A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series R60 | ||
Package Type SOT-223-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.15Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Power Dissipation Pd 7.8W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM 600V 1.3A SOT 223 3 Presto MOS with integrated high-speed diode is a power MOSFET with fast reverse recovery time, suitable for the switching applications. Which increases design flexibility while maintaining the industry’s fastest reverse recovery time optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners.
Fast reverse recovery time
Low on-resistance
Fast switching speed
Drive circuits can be simple
Pb-free plating and RoHS compliant
Related links
- ROHM R60 N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-223-3 R6003KND4TL1
- ROHM R60 N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-223-3 R6006KND4TL1
- ROHM R60 N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-223-3 R6002JND4TL1
- ROHM R60 N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-223-3 R6004END4TL1
- ROHM R60 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 R6009RND3TL1
- ROHM R60 N-Channel MOSFET 7 V Enhancement, 3-Pin TO-252 R6007RND3TL1
- ROHM R60 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220AB R6027YNX3C16
- ROHM R60 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220AB R6022YNX3C16