onsemi NVMFWS Type N-Channel MOSFET, 201 A, 80 V Enhancement, 8-Pin SO-8FL NVMFWS1D9N08XT1G
- RS Stock No.:
- 220-571
- Mfr. Part No.:
- NVMFWS1D9N08XT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 2 units)*
MYR19.79
FREE delivery for orders over RM 500.00
In Stock
- 1,488 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tape* |
|---|---|---|
| 2 - 18 | MYR9.895 | MYR19.79 |
| 20 - 198 | MYR8.925 | MYR17.85 |
| 200 - 998 | MYR8.21 | MYR16.42 |
| 1000 - 1998 | MYR7.63 | MYR15.26 |
| 2000 + | MYR6.21 | MYR12.42 |
*price indicative
- RS Stock No.:
- 220-571
- Mfr. Part No.:
- NVMFWS1D9N08XT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 201A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8FL | |
| Series | NVMFWS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 164W | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.9 mm | |
| Height | 1mm | |
| Length | 4.9mm | |
| Standards/Approvals | AEC and PPAP Capable | |
| Automotive Standard | AEC-Q | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 201A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8FL | ||
Series NVMFWS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 164W | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 175°C | ||
Width 5.9 mm | ||
Height 1mm | ||
Length 4.9mm | ||
Standards/Approvals AEC and PPAP Capable | ||
Automotive Standard AEC-Q | ||
- COO (Country of Origin):
- MY
The ON Semiconductor MOSFET has Low QRR. This device are Pb−Free, Halogen Free/BFR Free.
Low RDS(on) to Minimize Conduction Losses
RoHS Compliant
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