onsemi NVMFWS Type N-Channel MOSFET, 253 A, 80 V Enhancement, 5-Pin DFNW-5 NVMFWS1D5N08XT1G
- RS Stock No.:
- 220-570
- Mfr. Part No.:
- NVMFWS1D5N08XT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 2 units)*
MYR23.67
FREE delivery for orders over RM 500.00
In Stock
- 1,376 unit(s) ready to ship from another location
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Units | Per Unit | Per Tape* |
|---|---|---|
| 2 - 18 | MYR11.835 | MYR23.67 |
| 20 - 198 | MYR10.67 | MYR21.34 |
| 200 - 998 | MYR9.83 | MYR19.66 |
| 1000 - 1998 | MYR9.12 | MYR18.24 |
| 2000 + | MYR7.405 | MYR14.81 |
*price indicative
- RS Stock No.:
- 220-570
- Mfr. Part No.:
- NVMFWS1D5N08XT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 253A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFNW-5 | |
| Series | NVMFWS | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.43mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 194W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Width | 6 mm | |
| Length | 5mm | |
| Automotive Standard | AEC-Q | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 253A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFNW-5 | ||
Series NVMFWS | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.43mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 194W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Width 6 mm | ||
Length 5mm | ||
Automotive Standard AEC-Q | ||
- COO (Country of Origin):
- MY
The ON Semiconductor MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Halogen Free
RoHS Compliant
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