Infineon IKP28N65ES5XKSA1 Single IGBT, 38 A 650 V TO-220-3

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Subtotal (1 pack of 2 units)*

MYR27.95

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Units
Per Unit
Per Pack*
2 - 8MYR13.975MYR27.95
10 - 98MYR13.27MYR26.54
100 - 248MYR12.615MYR25.23
250 - 498MYR11.985MYR23.97
500 +MYR11.375MYR22.75

*price indicative

Packaging Options:
RS Stock No.:
242-0980
Mfr. Part No.:
IKP28N65ES5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

38 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

1

Maximum Power Dissipation

130 W

Configuration

Single

Package Type

TO-220-3

The Infineon 650 V, 28 A IGBT with anti-parallel diode in TO-220 package.It has a high current density, high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

High speed smooth switching device for hard & soft switching
175°C maximum junction temperature
No need for gate clamping components

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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