Infineon IKW75N65RH5XKSA1 Single IGBT Transistor Module, 75 A 650 V PG-TO247-3

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Subtotal (1 tube of 30 units)*

MYR933.96

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Units
Per Unit
Per Tube*
30 - 30MYR31.132MYR933.96
60 - 60MYR30.104MYR903.12
90 +MYR29.111MYR873.33

*price indicative

RS Stock No.:
249-6945
Mfr. Part No.:
IKW75N65RH5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

15V

Maximum Power Dissipation

395 W

Number of Transistors

2

Package Type

PG-TO247-3

Configuration

Single

The Infineon TRENCHSTOP 5S5 IGBT co-packed with full-rated 6th generation Cool SiCTMS schottky barrier diode. Ultra-low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C

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