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Infineon IHW30N65R5XKSA1 IGBT, 60 A 650 V, 3-Pin PG-TO247-3

RS Stock No.:: 215-6639
Mfr. Part No.:: IHW30N65R5XKSA1
Manufacturer:: Infineon

Infineon IHW30N65R5XKSA1 IGBT, 60 A 650 V, 3-Pin PG-TO247-3

Bulk discount available

Subtotal (1 pack of 5 units)*

MYR71.11

FREE delivery for orders over RM 500.00

In Stock

255 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
5 - 5	MYR14.222	MYR71.11
10 - 95	MYR13.028	MYR65.14
100 - 245	MYR12.034	MYR60.17
250 - 495	MYR11.168	MYR55.84
500 +	MYR10.854	MYR54.27

*price indicative

RS Stock No.:: 215-6639
Mfr. Part No.:: IHW30N65R5XKSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	60 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	176 W
	Package Type	PG-TO247-3
	Pin Count	3

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 60 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 176 W
	Package Type PG-TO247-3
	Pin Count 3

Datasheet-IHW30N65R5XKSA1

The Infineon resonant switching series reverse conducting insulated-gate bipolar transistor with monolithic body diode.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

Infineon IHW30N65R5XKSA1 IGBT, 60 A 650 V, 3-Pin PG-TO247-3

FREE delivery for orders over RM 500.00

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