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Infineon IKB40N65EF5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO263-3

RS Stock No.:: 215-6651
Mfr. Part No.:: IKB40N65EF5ATMA1
Manufacturer:: Infineon

Infineon IKB40N65EF5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO263-3

Bulk discount available

Subtotal (1 pack of 2 units)*

MYR41.77

FREE delivery for orders over RM 500.00

In Stock

976 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
2 - 8	MYR20.885	MYR41.77
10 - 98	MYR19.17	MYR38.34
100 - 248	MYR17.705	MYR35.41
250 - 498	MYR16.435	MYR32.87
500 +	MYR15.975	MYR31.95

*price indicative

RS Stock No.:: 215-6651
Mfr. Part No.:: IKB40N65EF5ATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	74 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20 V, ±30 V
	Maximum Power Dissipation	250 W
	Package Type	PG-TO263-3
	Pin Count	3

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 74 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20 V, ±30 V
	Maximum Power Dissipation 250 W
	Package Type PG-TO263-3
	Pin Count 3

Datasheet-IKB40N65EF5ATMA1

The Infineon high speed fast switching insulated-gate bipolar transistor with full current rated rapid 1 fast and soft antiparallel diode.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

Infineon IKB40N65EF5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO263-3

FREE delivery for orders over RM 500.00

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