Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

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Subtotal (1 reel of 1000 units)*

MYR11,628.00

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Per Unit
Per Reel*
1000 - 1000MYR11.628MYR11,628.00
2000 - 2000MYR11.163MYR11,163.00
3000 +MYR10.873MYR10,873.00

*price indicative

RS Stock No.:
215-6654
Mfr. Part No.:
IKB40N65ES5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

79 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

230 W

Package Type

PG-TO263-3

Pin Count

3

The Infineon high speed switching series fifth generation insulated-gate bipolar transistor.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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