Infineon IKP40N65H5XKSA1, Type N-Channel IGBT in TRENCHSTOP TM 5 Technology, 74 A 650 V, 3-Pin TO-220, Through Hole

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Subtotal (1 pack of 5 units)*

MYR68.60

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Units
Per Unit
Per Pack*
5 - 5MYR13.72MYR68.60
10 - 95MYR13.31MYR66.55
100 - 245MYR12.776MYR63.88
250 - 495MYR12.136MYR60.68
500 +MYR11.408MYR57.04

*price indicative

Packaging Options:
RS Stock No.:
215-6663
Mfr. Part No.:
IKP40N65H5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT in TRENCHSTOP TM 5 Technology

Maximum Continuous Collector Current Ic

74A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

250W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Series

High Speed Fifth Generation

Standards/Approvals

Pb-free lead plating, RoHS

Automotive Standard

No

The Infineon 650v fifth generation duopack insulated-gate bipolar transistor and diode of high speed switching series in trenchstop technology.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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