Infineon, Type N-Channel IGBT in TRENCHSTOP TM 5 Technology, 74 A 650 V, 3-Pin TO-220, Through Hole

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Subtotal (1 tube of 50 units)*

MYR570.85

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Units
Per Unit
Per Tube*
50 - 100MYR11.417MYR570.85
150 - 200MYR11.098MYR554.90
250 +MYR10.761MYR538.05

*price indicative

RS Stock No.:
215-6662
Mfr. Part No.:
IKP40N65H5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT in TRENCHSTOP TM 5 Technology

Maximum Continuous Collector Current Ic

74A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

250W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Operating Temperature

175°C

Standards/Approvals

Pb-free lead plating, RoHS

Series

High Speed Fifth Generation

Automotive Standard

No

The Infineon 650v fifth generation duopack insulated-gate bipolar transistor and diode of high speed switching series in trenchstop technology.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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