Infineon AIKW40N65DF5XKSA1 IGBT, 74 A 650 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 215-6618
- Mfr. Part No.:
- AIKW40N65DF5XKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
MYR82.87
FREE delivery for orders over RM 500.00
In Stock
- 156 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | MYR41.435 | MYR82.87 |
| 10 - 98 | MYR37.99 | MYR75.98 |
| 100 - 248 | MYR35.075 | MYR70.15 |
| 250 - 498 | MYR32.54 | MYR65.08 |
| 500 + | MYR31.64 | MYR63.28 |
*price indicative
- RS Stock No.:
- 215-6618
- Mfr. Part No.:
- AIKW40N65DF5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 74 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
| Maximum Power Dissipation | 250 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 74 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 250 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon high speed F5 technology insulated-gate bipolar transistor offering best-in-class efficiency in hard switching and resonant topologies.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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