onsemi MJD2955T4G Transistor, -10 A PNP, -60 V, 3-Pin DPAK

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Subtotal (1 tape of 50 units)*

MYR146.50

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  • Shipping from 13 April 2027
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Units
Per Unit
Per Tape*
50 - 600MYR2.93MYR146.50
650 - 1200MYR2.409MYR120.45
1250 +MYR2.408MYR120.40

*price indicative

Packaging Options:
RS Stock No.:
808-0023
Mfr. Part No.:
MJD2955T4G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Transistor

Maximum DC Collector Current Idc

-10A

Maximum Collector Emitter Voltage Vceo

-60V

Package Type

TO-252

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

70V dc

Maximum Emitter Base Voltage VEBO

5V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

20W

Maximum Transition Frequency ft

500kHz

Minimum DC Current Gain hFE

5

Transistor Polarity

PNP

Maximum Operating Temperature

150°C

Pin Count

3

Length

6.73mm

Height

10.41mm

Series

MJD2955

Standards/Approvals

No

Width

2.38mm

Automotive Standard

AEC-Q101

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD2955 (PNP) and MJD3055 (NPN) are complementary devices.

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves ("-1" Suffix)

Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix)

Electrically Similar to MJE2955 and MJE3055

DC Current Gain Specified to 10 Amperes

High Current Gain-Bandwidth Product fT = 2.0 MHz (Min) @ IC = 500 mAdc

NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable

These are PbFree Packages

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