MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 783-3024
Mfr. Part No.STW88N65M5
MYR50.70
Each
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N 84 A 710 V 29 mΩ TO-247 Through Hole 3 -25 V, +25 V Enhancement 5V 3V 450 W Single 1
RS Stock No. 103-2004
Mfr. Part No.STW88N65M5
MYR47.938
Each (In a Tube of 30)
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N 84 A 710 V 29 mΩ TO-247 Through Hole 3 -25 V, +25 V Enhancement 5V 3V 450 W Single 1
RS Stock No. 485-7888
Mfr. Part No.STP80NF10
MYR15.22
Each
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N 80 A 100 V 15 mΩ TO-220 Through Hole 3 -20 V, +20 V Enhancement 4V 2V 300 W Single 1
RS Stock No. 920-6658
Mfr. Part No.STP80NF10
MYR10.899
Each (In a Tube of 50)
units
N 80 A 100 V 15 mΩ TO-220 Through Hole 3 -20 V, +20 V Enhancement 4V 2V 300 W Single 1
RS Stock No. 419-2197
Mfr. Part No.STP12NM50
MYR13.13
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N 12 A 500 V 350 mΩ TO-220 Through Hole 3 -30 V, +30 V Enhancement 5V 3V 160 W Single 1
RS Stock No. 920-6682
Mfr. Part No.STP12NM50
MYR10.899
Each (In a Tube of 50)
units
N 12 A 500 V 350 mΩ TO-220 Through Hole 3 -30 V, +30 V Enhancement 5V 3V 160 W Single 1
RS Stock No. 687-5169
Mfr. Part No.STD30NF06LT4
MYR3.507
Each (In a Pack of 10)
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N 35 A 60 V 28 mΩ DPAK (TO-252) Surface Mount 3 -20 V, +20 V Enhancement 2.5V 1V 70 W Single 1
RS Stock No. 761-0051
Mfr. Part No.STP18NM60N
MYR9.42
Each
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N 13 A 600 V 285 mΩ TO-220 Through Hole 3 -25 V, +25 V Enhancement 4V 2V 110 W Single 1
RS Stock No. 168-7495
Mfr. Part No.STP18NM60N
MYR8.012
Each (In a Tube of 50)
units
N 13 A 600 V 285 mΩ TO-220 Through Hole 3 -25 V, +25 V Enhancement 4V 2V 110 W Single 1
RS Stock No. 920-8777
Mfr. Part No.STD30NF06LT4
MYR2.122
Each (On a Reel of 2500)
units
N 35 A 60 V 28 mΩ DPAK (TO-252) Surface Mount 3 -20 V, +20 V Enhancement 2.5V 1V 70 W Single 1
RS Stock No. 920-8815
Mfr. Part No.STY139N65M5
MYR97.34
Each (In a Tube of 30)
units
N 130 A 710 V 17 mΩ Max247 Through Hole 3 -25 V, +25 V Enhancement 5V 3V 625 W Single 1
RS Stock No. 687-5318
Mfr. Part No.STW11NK100Z
MYR25.57
Each
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N 8.3 A 1000 V 1.38 Ω TO-247 Through Hole 3 -30 V, +30 V Enhancement 4.5V 3V 230 W Single 1
RS Stock No. 760-9972
Mfr. Part No.STP10NM60N
MYR11.908
Each (In a Pack of 5)
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N 10 A 600 V 550 mΩ TO-220 Through Hole 3 -25 V, +25 V Enhancement 4V 2V 70 W Single 1
RS Stock No. 168-8929
Mfr. Part No.STY145N65M5
MYR142.564
Each (In a Tube of 30)
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N 138 A 650 V 15 mΩ Max247 Through Hole 3 -25 V, +25 V Enhancement 5V 3V 625 W Single 1
RS Stock No. 920-6623
Mfr. Part No.STP5NK80Z
MYR6.741
Each (In a Tube of 50)
units
N 4.3 A 800 V 2.4 Ω TO-220 Through Hole 3 -30 V, +30 V Enhancement 4.5V 3V 110 W Single 1
RS Stock No. 485-7721
Mfr. Part No.STP55NF06L
MYR6.878
Each (In a Pack of 5)
units
N 55 A 60 V 18 mΩ TO-220 Through Hole 3 -16 V, +16 V Enhancement - 1V 95 W Single 1
RS Stock No. 920-8795
Mfr. Part No.STP55NF06L
MYR5.87
Each (In a Tube of 50)
units
N 55 A 60 V 18 mΩ TO-220 Through Hole 3 -16 V, +16 V Enhancement - 1V 95 W Single 1
RS Stock No. 783-3028
Mfr. Part No.STY139N65M5
MYR110.47
Each
units
N 130 A 710 V 17 mΩ Max247 Through Hole 3 -25 V, +25 V Enhancement 5V 3V 625 W Single 1
RS Stock No. 920-6588
Mfr. Part No.STW11NK100Z
MYR21.714
Each (In a Tube of 30)
units
N 8.3 A 1000 V 1.38 Ω TO-247 Through Hole 3 -30 V, +30 V Enhancement 4.5V 3V 230 W Single 1
RS Stock No. 687-5358
Mfr. Part No.STP5NK80Z
MYR7.928
Each (In a Pack of 5)
units
N 4.3 A 800 V 2.4 Ω TO-220 Through Hole 3 -30 V, +30 V Enhancement 4.5V 3V 110 W Single 1