MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?


MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 173-4017
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MYR4.443
Each (On a Reel of 1000)
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N 9.2 A 100 V 270 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 60 W Single 1
RS Stock No. 873-1156
Mfr. Part No.IRF520PBF
MYR3.05
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N 9.2 A 100 V 270 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 60 W Single 1
RS Stock No. 178-3696
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MYR1.856
Each (On a Reel of 3000)
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N 35 A 30 V 8 mΩ 1212 Surface Mount 8 ±20 V Enhancement 1.15V 2.2V 52 W Single 1
RS Stock No. 178-3924
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MYR2.432
Each (In a Pack of 25)
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MYR2.176
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N 30 A 30 V 10 mΩ PowerPAIR 3 x 3 Surface Mount 8 -16 V, +20 V Enhancement 1V 2.4V 16.7 W - 2
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MYR6.32
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N 45 A 100 V 13 mΩ SO-8 Surface Mount 8 ±20 V Enhancement 2V 3.6V 65.7 W Single 1
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MYR1.60
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P 10 A 30 V 30 mΩ SC-70 Surface Mount 6 ±20 V Enhancement 2.5V 1.5V 13.6 W Single 1
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RS Stock No. 178-3901
Mfr. Part No.SiA106DJ-T1-GE3
MYR3.33
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N 12 A 60 V 20 mΩ SC-70 Surface Mount 6 ±20 V Enhancement 4V 2V 19 W Single 1
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Mfr. Part No.SQM40016EM_GE3
MYR12.16
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N 250 A 40 V 1 mΩ D2PAK (TO-263) Surface Mount 7 + Tab ±20 V Enhancement 2.5V 3.5V 300 W Single 1
RS Stock No. 178-3698
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N 80 A 25 V 1 mΩ 1212 Surface Mount 8 -12 V, +16 V Enhancement 1V 2.2V 65.7 W Single 1
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MYR3.328
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N 45 A 100 V 10 mΩ SO-8 Surface Mount 8 ±20 V Enhancement 2V 3.6V 65.7 W Single 1
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MYR1.60
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P 3.6 A 40 V 100 mΩ SOT-23 Surface Mount 3 ±20 V Enhancement 2.5V 1V 1.7 W Single 1
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P 2.68 A 20 V 200 mΩ SC-70 Surface Mount 6 ±8 V Enhancement 1.5V 0.6V 13.6 W Single 1
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P 35 A 30 V 20 mΩ 1212 Surface Mount 8 ±20 V Enhancement 2.8V 1.5V 52.1 W Single 1
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