N-Channel MOSFET, 9 A, 400 V, 3-Pin TO-220FP STMicroelectronics STP11NK40ZFP
- RS Stock No.:
- 920-6670
- Mfr. Part No.:
- STP11NK40ZFP
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 50 units)**
MYR343.80
1800 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Tube** |
---|---|---|
50 - 50 | MYR6.876 | MYR343.80 |
100 - 150 | MYR6.77 | MYR338.50 |
200 + | MYR6.638 | MYR331.90 |
**price indicative
- RS Stock No.:
- 920-6670
- Mfr. Part No.:
- STP11NK40ZFP
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 9 A | |
Maximum Drain Source Voltage | 400 V | |
Package Type | TO-220FP | |
Series | MDmesh, SuperMESH | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 550 mΩ | |
Channel Mode | Enhancement | |
Maximum Power Dissipation | 30 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Number of Elements per Chip | 1 | |
Length | 10.4mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 32 nC @ 10 V | |
Width | 4.6mm | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 16.4mm | |
Select all | ||
---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 400 V | ||
Package Type TO-220FP | ||
Series MDmesh, SuperMESH | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 550 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 30 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 32 nC @ 10 V | ||
Width 4.6mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 16.4mm | ||
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