N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-247AC Infineon IRFP260NPBF

RS Stock No.:: 919-5019
Mfr. Part No.:: IRFP260NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-247AC Infineon IRFP260NPBF

Bulk discount available

Subtotal (1 tube of 25 units)**

MYR314.70

150 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR700.00

Units	Per Unit	Per Tube**
25 - 25	MYR12.588	MYR314.70
50 - 75	MYR12.393	MYR309.825
100 +	MYR12.152	MYR303.80

**price indicative

RS Stock No.:: 919-5019
Mfr. Part No.:: IRFP260NPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 50A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFP260NPBF

This MOSFET is intended for high-power applications, delivering efficiency and reliability across various electronic systems. With its enhancement mode design and robust current handling capabilities, it plays a crucial role in optimising circuit performance while effectively managing thermal dissipation.

Features & Benefits

• Supports continuous drain currents up to 50A for strong performance
• Operates efficiently with a maximum drain-source voltage of 200V
• Enhancement mode design offers improved control and versatility
• Low Rds(on) of 40mΩ reduces energy losses
• Designed for through-hole mounting, facilitating easy installation

Applications

• Utilised in power supply circuits for managing high currents
• Suitable for automotive requiring durable electronic components
• Applied in industrial equipment for effective power control
• Commonly found in renewable energy systems to enhance efficiency

What is the maximum power dissipation for this component?

The power dissipation can reach up to 300W, ensuring efficient performance in high-load conditions.

How does the low Rds(on) benefit circuit efficiency?

The low Rds(on) of 40mΩ significantly reduces conduction losses, enhancing overall efficiency and minimising heat generation during operation.

What are the advantages of using this MOSFET in power applications?

This MOSFET provides high continuous drain current and operates effectively across a wide temperature range, making it suitable for power applications.

Is it easy to install with other components in a circuit?

The through-hole mounting type simplifies integration into various circuit designs, allowing for straightforward assembly with existing components.

How does the enhance mode design affect performance?

The enhancement mode design ensures that the device conducts only when sufficient gate voltage is applied, improving switching efficiency and reducing unwanted current flow during inactive periods.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	50 A
Maximum Drain Source Voltage	200 V
Series	HEXFET
Package Type	TO-247AC
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	40 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	5.3mm
Transistor Material	Si
Typical Gate Charge @ Vgs	234 nC @ 10 V
Length	15.9mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Height	20.3mm