Vishay SiR870ADP Type N-Channel MOSFET, 60 A, 100 V Enhancement, 8-Pin SO-8
- RS Stock No.:
- 919-4242
- Mfr. Part No.:
- SIR870ADP-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
MYR18,798.00
FREE delivery for orders over RM 500.00
In Stock
- Plus 3,000 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR6.266 | MYR18,798.00 |
| 6000 - 9000 | MYR6.129 | MYR18,387.00 |
| 12000 + | MYR6.016 | MYR18,048.00 |
*price indicative
- RS Stock No.:
- 919-4242
- Mfr. Part No.:
- SIR870ADP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SiR870ADP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 53.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.26 mm | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SiR870ADP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 53.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.26 mm | ||
Height 1.12mm | ||
Length 6.25mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay SiR870ADP Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SIR870ADP-T1-GE3
- Vishay Si7164DP Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8
- Vishay SiRA74DP Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay SiR416DP Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Dual SI7997DP Type N-Channel MOSFET -30 V Enhancement, 8-Pin PowerPack
- Vishay SiR418DP Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay SiRA84BDP Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8