Microchip Single DN2625 1 Type N-Channel Power MOSFET, 1.1 A, 250 V Depletion, 8-Pin DFN
- RS Stock No.:
- 916-3725P
- Mfr. Part No.:
- DN2625DK6-G
- Manufacturer:
- Microchip
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MYR137.80
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Units | Per Unit |
|---|---|
| 10 - 20 | MYR13.78 |
| 25 - 95 | MYR13.206 |
| 100 + | MYR12.92 |
*price indicative
- RS Stock No.:
- 916-3725P
- Mfr. Part No.:
- DN2625DK6-G
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.1A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | DN2625 | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | 1.8V | |
| Typical Gate Charge Qg @ Vgs | 7.04nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Height | 0.85mm | |
| Standards/Approvals | No | |
| Length | 5.1mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.1A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series DN2625 | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf 1.8V | ||
Typical Gate Charge Qg @ Vgs 7.04nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Height 0.85mm | ||
Standards/Approvals No | ||
Length 5.1mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
DN2625 N-Channel MOSFET Transistors
The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
Features
Low Gate Threshold Voltage
Designed to be Source-Driven
Low Switching Losses
Low Effective Output Capacitance
Designed for Inductive Loads