SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0120090D

RS Stock No.:: 915-8849P
Mfr. Part No.:: C3M0120090D
Manufacturer:: Wolfspeed

SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0120090D

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57 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Price Each (Supplied in a Tube)

MYR54.58

Units	Per Unit
8 - 14	MYR54.58
15 +	MYR52.96

RS Stock No.:: 915-8849P
Mfr. Part No.:: C3M0120090D
Manufacturer:: Wolfspeed

C3M0120090D Silicon Carbide Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	23 A
Maximum Drain Source Voltage	900 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	155 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	1.8V
Maximum Power Dissipation	97 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +18 V
Transistor Material	SiC
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	17.3 nC @ 15 V
Length	16.13mm
Width	21.1mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	4.8V
Height	5.21mm

SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0120090D

Wolfspeed Silicon Carbide Power MOSFETs