Infineon HEXFET N-Channel MOSFET, 6.3 A, 20 V Enhancement, 3-Pin SOT-23

RS Stock No.:: 913-4076
Mfr. Part No.:: IRLML6244TRPBF
Manufacturer:: Infineon

Infineon HEXFET N-Channel MOSFET, 6.3 A, 20 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

MYR1,221.00

FREE delivery for orders over RM 150.00

Temporarily out of stock

6,000 unit(s) shipping from 17 December 2026
Plus 6,000 unit(s) shipping from 14 January 2027
Plus 6,000 unit(s) shipping from 22 February 2027

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Units	Per Unit	Per Reel*
3000 +	MYR0.407	MYR1,221.00

*price indicative

RS Stock No.:: 913-4076
Mfr. Part No.:: IRLML6244TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6.3A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	27mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.3W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	12V
	Typical Gate Charge Qg @ Vgs	8.9nC
	Maximum Operating Temperature	150°C
	Width	1.4mm
	Standards/Approvals	No
	Length	3.04mm
	Height	1.02mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6.3A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 27mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.3W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 12V
	Typical Gate Charge Qg @ Vgs 8.9nC
	Maximum Operating Temperature 150°C
	Width 1.4mm
	Standards/Approvals No
	Length 3.04mm
	Height 1.02mm
	Automotive Standard No

COO (Country of Origin):: PH

Infineon HEXFET Series MOSFET, 20V Maximum Drain Source Voltage, 6.3A Maximum Continuous Drain Current - IRLML6244TRPBF

This MOSFET is a low-voltage switching transistor designed for surface-mount applications where compact power handling is required. It functions as an N-channel enhancement device suitable for power-management roles in densely populated electronic assemblies. The component operates across a wide temperature range and tolerates standard gate-drive excursions, making it appropriate for high-efficiency DC-DC conversion and general switching duties.

Features and Benefits:

• Very low on-resistance 27mΩ reduces conduction losses
• Continuous drain current 6.3A supports higher load currents
• Drain-source voltage rating 20V enables low-voltage power designs
• Maximum power dissipation 1.3W allows sustained thermal loading
• Gate charge 8.9nC enables efficient switching performance
• Gate-source tolerance 12V permits robust drive margin

Applications

• Suitable for DC-DC converter stages in compact electronics
• Ideal for battery management and portable power circuits
• Used with switching regulators in telecom equipment
• Can be used for load switching in small motor drivers
• Useful for power path control in consumer devices

What temperature extremes can it withstand in operation?

It is rated for operation from -55°C up to 150°C, allowing use in harsh thermal environments.

How does package choice affect thermal and assembly considerations?

The SOT-23 surface-mount package minimises board footprint and supports automated placement while limiting thermal conduction compared with larger packages.

What pin configuration is available for PCB layout?

The device presents a three-pin arrangement compatible with standard SOT-23 land patterns for straightforward routing.

How does channel behaviour influence design topology?

As an N-channel enhancement device, it requires a positive gate drive relative to source to switch and is suited to low-side switching or synchronous rectification roles.