Infineon OptiMOS Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC011N03LSATMA1
- RS Stock No.:
- 906-4280
- Mfr. Part No.:
- BSC011N03LSATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
MYR65.29
FREE delivery for orders over RM 150.00
In Stock
- 7,740 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 1240 | MYR6.529 | MYR65.29 |
| 1250 - 2490 | MYR5.949 | MYR59.49 |
| 2500 + | MYR5.084 | MYR50.84 |
*price indicative
- RS Stock No.:
- 906-4280
- Mfr. Part No.:
- BSC011N03LSATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 96W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 96W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
Infineon OptiMOS Series MOSFET, 30V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC011N03LSATMA1
This MOSFET is a power switching device designed for high-current, low-voltage applications in surface-mount assemblies. It operates across an extended ambient range and is intended for demanding thermal and electrical environments where efficient conduction and rapid switching are required.
Features and Benefits:
• Very low on-resistance 1.4mΩ reduces conduction losses
• High continuous drain capability 100A handles heavy loads
• Peak power dissipation 96W supports elevated power transfer
• Low forward voltage 1V improves conversion efficiency
• Typical gate charge 36nC enables fast gate transitions
• Rated gate tolerance 20V protects against gate overstress
• High continuous drain capability 100A handles heavy loads
• Peak power dissipation 96W supports elevated power transfer
• Low forward voltage 1V improves conversion efficiency
• Typical gate charge 36nC enables fast gate transitions
• Rated gate tolerance 20V protects against gate overstress
Applications
• Suitable for synchronous buck converters in servers
• Ideal for high-current motor-drive stages
• Used with power distribution modules in telecom racks
• Can be used for DC-DC power conversion in inverters
• Suitable for battery management and charging systems
• Ideal for high-current motor-drive stages
• Used with power distribution modules in telecom racks
• Can be used for DC-DC power conversion in inverters
• Suitable for battery management and charging systems
What thermal limits should designers allow for under sustained operation?
The device is specified to operate between -55°C and 150°C, so thermal management should ensure junction temperatures remain within this range under expected dissipation.
How does the gate charge affect drive requirements?
With a typical gate charge of 36nC, gate drivers must supply adequate charge quickly to achieve desired switching speeds while minimising transition losses.
What mounting considerations are necessary for reliable performance?
The component is supplied in an 8-pin TDSON surface-mount package measuring 6.1 x 5.35mm, so PCB land pattern and solder fillets should accommodate thermal conduction and mechanical stability.
Which electrical ratings dictate maximum switching voltage and current?
The device has a maximum drain-source voltage of 30V and a continuous drain current rating of 100A
switching topologies should remain within these electrical limits.
Related links
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON BSC011N03LSIATMA1
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TDSON BSC010NE2LSATMA1
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON BSC014N04LSATMA1
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 8-Pin TDSON IAUC100N10S5N040ATMA1